热销苏州纳维 2/4英寸氮化镓自支撑衬底

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产品型号 (Item)

GaN-FS-C-U-C50

GaN-FS-C-N-C50

GaN-FS-C-SI-C50

尺寸 (Dimensions)

Ф 50.8 mm ± 1 mm

厚度 (Thickness)

350 ± 25 µm

有效面积

(Useable Surface Area)

> 90%

晶体取向 (Orientation)

C-plane (0001) off angle toward M-Axis 0.35°± 0.15°

主定位边 (Orientation Flat)

(1-100) ± 0.5°, 16.0 ± 1.0 mm

次定位边

(Secondary Orientation Flat)

(11-20) ± 3°, 8.0 ± 1.0 mm

TTV

(Total Thickness Variation)

≤ 15 µm

弯曲度 (BOW)

≤ 20 µm

导电类型 (Conduction Type)

N-type

(Undoped)

N-type

(Ge-doped)

Semi-Insulating

(Fe-doped)

电阻率 (Resistivity(300K))

< 0.5 Ω·cm

< 0.05 Ω·cm

>106 Ω·cm

位错密度

(Dislocation Density)

1~9x105 cm-2

5x105 cm-2

~3x106 cm-2

1~9x105 cm-2

1~3x106 cm-2

1~3x106 cm-2

抛光 (Polishing)

Front Surface: Ra < 0.2 nm. Epi-ready polished

Back Surface: Fine ground

包装 (Package)

Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.