苏州纳维 2/4英寸氮化镓厚膜晶片

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产品型号 (Item)

GaN-T-C-U-C50

GaN-T-C-N-C50

GaN-T-C-P-C50

尺寸 (Dimensions)

Ф 50.8mm ± 0.1mm

厚度 (Thickness)

4 µm, 20 µm

4 µm

晶体取向 (Orientation)

C-plane(0001) ± 0.5°

导电类型

(Conduction Type)

N-type

(Undoped)

N-type

(Si-doped)

P-type

(Mg-doped)

电阻率 (Resistivity(300K))

< 0.5 Ω·cm

< 0.05 Ω·cm

~ 10 Ω·cm

载流子浓度

(Carrier Concentration)

< 5x1017 cm-3

> 1x1018 cm-3

> 6x1016 cm-3

迁移率 (Mobility)

~ 300cm2/V·s

~ 200 cm2/V·s

~ 10 cm2/V·s

位错密度

(Dislocation Density)

Less than 5x108 cm-2

衬底结构

(Substrate structure)

GaN on Sapphire (Standard: SSP Option: DSP)

有效面积

(Useable Surface Area)

> 90%

包装 (Package)

Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.