苏州纳维 非极性半极性氮化镓自支撑衬底

手机扫描查看

产品型号 (Item)

GaN-FS-C-U-S10*10

GaN-FS-C-N-S10*10

GaN-FS-C-SI-S10*10

尺寸 (Dimensions)

10.0 mm x 10.5 mm；± 0.2 mm

厚度 (Thickness)

350 ± 25 µm

晶体取向 (Orientation)

C-plane (0001) off angle toward M-Axis 0.35°± 0.15°

TTV

(Total Thickness Variation)

≤ 10 µm

弯曲度 (BOW)

≤ 10 µm

导电类型

(Conduction Type)

N-type

(Undoped)

N-type

(Ge-doped)

Semi-Insulating

(Fe-doped)

电阻率 (Resistivity(300K))

< 0.5 Ω·cm

< 0.05 Ω·cm

> 106 Ω·cm

位错密度

(Dislocation Density)

1~9x104cm-2

5x105 cm-2~3x106 cm-2

1~9x104cm-2

1~9x105 cm-2

1~9x105 cm-2

1~3x106 cm-2

1~3x106 cm-2

有效面积

(Useable Surface Area)

> 90%

抛光 (Polishing)

Front Surface: Ra < 0.2nm. Epi-ready polished

Back Surface: Fine ground

包装 (Package)

Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.